Please use this identifier to cite or link to this item:
Title: Distributed modeling of six-port transformer for millimeter-wave SiGe BiCMOS circuits design
Authors: Hou, Debin
Hong, Wei
Goh, Wang Ling
Xiong, Yong-Zhong
Arasu, Muthukumaraswamy Annamalai
He, Jin
Chen, Jixin
Madihian, Mohammad
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Hou, D., Hong, W., Goh, W. L., Xiong, Y. Z., Arasu, M. A., He, J., et al. (2012). Distributed Modeling of Six-Port Transformer for Millimeter-Wave SiGe BiCMOS Circuits Design. IEEE Transactions on Microwave Theory and Techniques, 60(12), 3728-3738.
Series/Report no.: IEEE transactions on microwave theory and techniques
Abstract: In this paper, a six-port distributed model of on-chip single-turn transformers in silicon that can predict the features of the transformers up to 200 GHz is presented. Moreover, the proposed model is scalable with the diameter of the transformer. Based on the developed model, a transformer balun with improved differential-port balance is deployed in a D-band up-conversion mixer design in 0.13-μm SiGe BiCMOS technology. The mixer achieves a measured conversion gain (CG) of 4 ~ 7 dB and local-oscillator-to-RF isolation over 30 dB from 110 to 140 GHz. The results have one of the best CGs in the millimeter-wave range. A D-band two-stage transformer-coupled power amplifier (PA) integrated with a mixer is also reported here. Using the six-port transformer model, the performance of the PA can be conveniently optimized. At a 2-V supply, the gain and saturated output power of 20 dB and 8 dBm, respectively, are both experimentally achieved at 127 GHz. At 3 V, the measured output power rose to 11 dBm and this is the best power performance among the reported D-band silicon-based amplifiers to date.
DOI: 10.1109/TMTT.2012.2220563
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.