Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/96234
Title: | AlN nanowires : synthesis, physical properties, and nanoelectronics applications | Authors: | Kenry Yong, Ken-Tye Yu, Siu Fung |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | Kenry , Yong, K.-T., & Yu, S. F. (2012). AlN nanowires: synthesis, physical properties, and nanoelectronics applications. Journal of Materials Science, 47(14), 5341-5360. | Series/Report no.: | Journal of materials science | Abstract: | One-dimensional aluminum nitride (AlN) nanostructures, especially AlN nanowires, have been subjected to numerous investigations due to their unique physical properties and applications ranging from electronics to biomedical. This article reviews the synthesis of AlN nanowires and studies their physical properties and potential nanoelectronics applications. First, the different fabrication techniques used to synthesize AlN nanowires and their growth mechanisms are discussed. Next, the physical properties of AlN nanowires, such as the field emission, transport, photoluminescence, as well as the mechanical and piezoelectric properties are summarized. Finally, the potential applications of AlN nanowires in the field of nanoelectronics are described. Furthermore, this review summarizes the perspectives and outlooks on the future development of AlN nanowires. | URI: | https://hdl.handle.net/10356/96234 http://hdl.handle.net/10220/11369 |
DOI: | 10.1007/s10853-012-6388-0 | Rights: | © 2012 Springer Science+Business Media, LLC. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles |
SCOPUSTM
Citations
5
38
Updated on Sep 1, 2020
PublonsTM
Citations
5
34
Updated on Mar 6, 2021
Page view(s) 50
499
Updated on Jun 25, 2022
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.