Please use this identifier to cite or link to this item:
Title: Unified regional approach to high temperature SOI DC/AC modeling
Authors: Chiah, Siau Ben
Zhou, Xing
Chen, Zuhui
Chen, Hung Ming
Issue Date: 2012
Source: Chiah, S. B., Zhou, X., Chen, Z., & Chen, H. M. (2012). Unified Regional Approach to High Temperature SOI DC/AC Modeling. Microtech conference & Expo 2012, Santa Clara, CA.
Abstract: This paper extends the recent model development [1] to include temperature effect in a range from room temperature to 300C. The extraction of the temperature coefficients used in the model and the prediction of the model accuracy to the measurement data are included in this paper. It has been indentified by Shucair [3], Prijic et al. [4] and further commented by Eman et al. [2] that a Zero-Temperature-Coefficient (ZTC) point of a MOSFET in the linear operating region is a value of Vg that the reduction of threshold voltage due to the higher operating temperature is counter-balanced by the reduction of the mobility. The reduction of threshold voltage at increasing temperature with missing mobility reduction effect is indicated. Together with our temperature-dependent mobility formulation with two temperature coefficients, which are extracted from three linear region IdsVgs measurement data at nominal, mid and high temperatures, a ZTC point in a range of temperature can be shown. The model prediction to the DC measurement and AC MEDICI data are shown.
Rights: © 2012 Microtech conference & Expo.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.