Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96350
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dc.contributor.authorMiao, Shifengen
dc.contributor.authorLi, Huaen
dc.contributor.authorXu, Qing-Fengen
dc.contributor.authorLi, Najunen
dc.contributor.authorZheng, Junweien
dc.contributor.authorSun, Ruen
dc.contributor.authorLu, Jianmeien
dc.contributor.authorLi, Chang Mingen
dc.date.accessioned2013-07-16T04:20:52Zen
dc.date.accessioned2019-12-06T19:29:23Z-
dc.date.available2013-07-16T04:20:52Zen
dc.date.available2019-12-06T19:29:23Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationMiao, S., Li, H., Xu, Q.-F., Li, N., Zheng, J., Sun, R., et al. (2012). Molecular length adjustment for organic azo-based nonvolatile ternary memory devices. Journal of Materials Chemistry, 22(32), 16582-16589.en
dc.identifier.urihttps://hdl.handle.net/10356/96350-
dc.identifier.urihttp://hdl.handle.net/10220/11538en
dc.description.abstractTwo conjugated small molecules with different molecular length, DPAPIT and DPAPPD, in which an electron donor dimethylamino moiety and an electron acceptor phthalimide core unit are bridged by another electron-accepting azobenzene block, were designed and synthesized. DPAPIT molecule with longer conjugation length stacked regularly in the solid state and formed uniform nanocrystalline film. The fabricated memory devices with DPAPIT as active material exhibited outstanding nonvolatile ternary memory effect with the current ratio of 1:101.7:104 for “0”, “1” and “2” states and all the switching threshold voltages lower than −3 V. In contrast, the shorter molecule DPAPPD showed amorphous microstructure and no obvious conductive switching behavior was observed in the device. The crystallinity and surface roughness of DPAPIT thin films were significantly improved as the annealing temperature increased, lowering the switching threshold voltages which are highly desirable for low-power consumption data-storage devices. It is worth noting that the tristable memory signals of DPAPIT film could also be achieved by using conductive atomic force microscopy with platinum-coated probe, which enables fabrication of nano-scale or even molecular-scale device, a significant progress for the ultra-high density data storage application. Mechanism analysis demonstrated that two charge traps with different depth in the molecular backbone were injected by charge carriers progressively as the external bias increased, resulting in the formation of three distinct conductive states (OFF, ON1 and ON2 states).en
dc.language.isoenen
dc.relation.ispartofseriesJournal of materials chemistryen
dc.rights© 2012 The Royal Society of Chemistry.en
dc.subjectDRNTU::Engineering::Chemical engineeringen
dc.titleMolecular length adjustment for organic azo-based nonvolatile ternary memory devicesen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Chemical and Biomedical Engineeringen
dc.identifier.doihttp://dx.doi.org/10.1039/c2jm32992aen
item.grantfulltextnone-
item.fulltextNo Fulltext-
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