Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96373
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dc.contributor.authorLi, Mingjieen
dc.contributor.authorXing, Guichuanen
dc.contributor.authorXing, Guozhongen
dc.contributor.authorWu, Boen
dc.contributor.authorWu, Tomen
dc.contributor.authorZhang, Xinhaien
dc.contributor.authorSum, Tze Chienen
dc.date.accessioned2013-05-08T07:30:09Zen
dc.date.accessioned2019-12-06T19:29:37Z-
dc.date.available2013-05-08T07:30:09Zen
dc.date.available2019-12-06T19:29:37Z-
dc.date.copyright2013en
dc.date.issued2013en
dc.identifier.citationLi, M., Xing, G., Xing, G., Wu, B., Wu, T., Zhang, X., & Sum, T. C. (2013). Origin of green emission and charge trapping dynamics in ZnO nanowires. Physical Review B, 87(11), 115309-.en
dc.identifier.urihttps://hdl.handle.net/10356/96373-
dc.description.abstractThe origins of the commonly observed green emission (GE) from ZnO nanostructures remain highly controversial despite extensive studies over the past few decades. Herein, through a comprehensive ultrafast optical spectroscopy study, new insights into its origin and the charge trapping dynamics at the GE centers in ZnO nanowires prepared by the vapor transport method are gained. Transient absorption spectroscopy (TAS) revealed a sub-band-gap absorption bleaching band arising from the state filling of the electrons in the conduction band and holes trapped in the GE centers. The GE originates from the recombination between the electrons in the conduction band and/or shallow donor levels and the holes trapped at the GE centers (which are located at ∼0.88 eV above the valence band). Importantly, an ultrafast excitonic Auger-type hole trapping process to the GE centers occurring in a subpicosecond time scale was also uncovered by TAS—shedding new light on the mechanism behind the fast and efficient charge trapping of photoexcited carriers. The knowledge gained is crucial for the development of ZnO-based optoelectronic devices.en
dc.language.isoenen
dc.relation.ispartofseriesPhysical review Ben
dc.rights© 2013 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following official DOI: http://dx.doi.org/10.1103/PhysRevB.87.115309. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Science::Mathematicsen
dc.titleOrigin of green emission and charge trapping dynamics in ZnO nanowiresen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.contributor.researchEnergy Research Institute @NTUen
dc.identifier.doi10.1103/PhysRevB.87.115309en
dc.description.versionPublished versionen
dc.identifier.rims172787en
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