Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96430
Title: Indications of surface-dominated transport in single crystalline nanoflake devices of topological insulator Bi_{1.5}Sb_{0.5}Te_{1.8}Se_{1.2}
Authors: Xia, Bin
Ren, Peng
Sulaev, Azat
Liu, Peng
Shen, Shun-Qing
Wang, Lan
Keywords: DRNTU::Science::Mathematics
Issue Date: 2013
Source: Xia, B., Ren, P., Sulaev, A., Liu, P., Shen, S. Q., & Wang, L. (2013). Indications of surface-dominated transport in single crystalline nanoflake devices of topological insulator Bi_{1.5}Sb_{0.5}Te_{1.8}Se_{1.2}. Physical Review B, 87(8).
Series/Report no.: Physical review B
Abstract: We report experimental evidence of surface-dominated transport in single crystalline nanoflake devices of topological insulator Bi1.5Sb0.5Te1.8Se1.2 (BSTS). The resistivity measurements show dramatic differences between the nanoflake devices and bulk single crystal. Based on a two-channel model, the analysis on the resistivity and Hall resistance indicates that ∼99% surface transport contribution can be realized in 200 nm-thick BSTS nanoflake devices. Using a standard back gate with SiO2 as a dielectric layer, a pronounced ambipolar electric field effect was observed in devices fabricated with 100–200 nm thick flakes.Moreover, angle-dependent magnetoresistances of a nanoflake device with a thickness of 596 nanometers are fitted to a universal curve for the perpendicular component of the applied magnetic field. The value of phase coherence length obtained from two-dimensional weak antilocalization fitting further confirmed the surface dominated transport. Our results open a path for realization of electric and spintronic devices based on the topological helical surface states.
URI: https://hdl.handle.net/10356/96430
http://hdl.handle.net/10220/9916
DOI: 10.1103/PhysRevB.87.085442
Rights: © 2013 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following official DOI: http://dx.doi.org/10.1103/PhysRevB.87.085442. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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