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Title: Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films
Authors: Huang, C. W.
Chen, Z. H.
Chen, Lang
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2013
Source: Huang, C. W., Chen, Z. H., & Chen, L. (2013). Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films. Journal of Applied Physics, 113(9).
Series/Report no.: Journal of applied physics
Abstract: Non-monotonous thickness-dependent ferroelectric and ferroelectric-ferroelastic domain size scaling behaviors were revealed in ferroelectric films, including three distinct regions: (I) a classical 1/2 power law relationship for thick films, (II) a deviation from the 1/2 scaling relationship for an intermediate thickness range, and (III) an exponential increase in ultrathin films when decreasing the film thickness. The calculations indicate a much narrower region (II) in ferroelectric films with ferroelectric domains than that with ferroelectric-ferroelastic ones. As the film thickness decreases, the stable domain pattern also changes from a ferroelectric-ferroelastic domain to a ferroelectric one, which leads to the divergence of domain size scaling.
ISSN: 00218979
DOI: 10.1063/1.4794005
Rights: © 2013 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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