Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96542
Title: Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure
Authors: Lam, Jeffrey C. K.
Huang, Maggie Y. M.
Ng, Tsu Hau
Mohammed Khalid Dawood
Zhang, Fan
Du, Anyan
Sun, Handong
Shen, Zexiang
Mai, Zhihong
Keywords: DRNTU::Science::Mathematics::Applied mathematics
Issue Date: 2013
Source: Lam, J. C. K., Huang, M. Y. M., Ng, T. H., Mohammed, K. D., Zhang, F., Du, A., et al. (2013). Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure. Applied Physics Letters, 102(2).
Series/Report no.: Applied physics letters
Abstract: Ultra-low-k time-dependent dielectric breakdown (TDDB) is one of the most important reliability issues in Cu/low-k technology development due to its weaker intrinsic breakdown strength compared to SiO2 dielectrics. With continuous technology scaling, this problem is further exacerbated for Cu/ultra-low-k interconnects. In this letter, the TDDB degradation behavior of ultra-low-k dielectric in Cu/ultra-low-k interconnects will be investigated by a method consisting of a combination of Raman with Fourier transform infrared vibrational microscopes. In TDDB tests on Cu/low-k interconnect, it was found that intrinsic degradation of the ultra-low-k dielectric would first occur under electrical field stress. Upon further electrical field stress, the ultra-low-k dielectric degradation would be accelerated due to Ta ions migration from the Ta/TaN barrier bi-layer into the ultra-low-k dielectrics. In addition, no out-diffusion of Cu ions was observed in our investigation on Cu/Ta/TaN/ SiCOH structures.
URI: https://hdl.handle.net/10356/96542
http://hdl.handle.net/10220/9881
ISSN: 00036951
DOI: 10.1063/1.4776735
Rights: © 2013 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4776735. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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