Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96604
Title: Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature
Authors: Li, Hai
Yin, Zongyou
He, Qiyuan
Li, Hong
Huang, Xiao
Lu, Gang
Fam, Derrick Wen Hui
Zhang, Qing
Zhang, Hua
Tok, Alfred Iing Yoong
Issue Date: 2012
Source: Li, H., Yin, Z., He, Q., Li, H., Huang, X., Lu, G., et al. (2012). Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature. Small, 8(1), 63-67.
Series/Report no.: Small
Abstract: Single- and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS2 device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS2 devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.
URI: https://hdl.handle.net/10356/96604
http://hdl.handle.net/10220/10354
ISSN: 1613-6829
DOI: 10.1002/smll.201101016
Rights: © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
MSE Journal Articles

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.