Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96609
Title: Symmetrical negative differential resistance behavior of a resistive switching device
Authors: Du, Yuanmin
Pan, Hui
Wang, Shijie
Wu, Tom
Feng, Yuan Ping
Pan, Jisheng
Wee, Andrew Thye Shen
Issue Date: 2012
Source: Du, Y., Pan, H., Wang, S., Wu, T., Feng, Y. P., Pan, J., et al. (2012). Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device. ACS Nano, 6(3), 2517-2523.
Series/Report no.: ACS nano
Abstract: With a thin insulator sandwiched between two electrodes, the negative differential resistance (NDR) behavior has been frequently reported for its potential device applications. Here we report the experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO2. We propose a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer. Current–voltage measurements demonstrated a highly reproducible state at about 0.65 eV, and the photoelectron spectroscopy measurements showed that it complies well with the Ti3d band gap state. Our first-principle calculations confirm that charge storage and release arise from trapping and detrapping of oxygen molecular ions at the defect sites. The results and mechanism demonstrated here in a thin layer could be extended to other systems approaching molecular dimensions for device applications.
URI: https://hdl.handle.net/10356/96609
http://hdl.handle.net/10220/10328
ISSN: 1936-0851
DOI: 10.1021/nn204907t
Rights: © 2012 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

SCOPUSTM   
Citations

82
checked on Sep 1, 2020

WEB OF SCIENCETM
Citations

79
checked on Oct 19, 2020

Page view(s)

279
checked on Oct 26, 2020

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.