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https://hdl.handle.net/10356/96609
Title: | Symmetrical negative differential resistance behavior of a resistive switching device | Authors: | Du, Yuanmin Pan, Hui Wang, Shijie Wu, Tom Feng, Yuan Ping Pan, Jisheng Wee, Andrew Thye Shen |
Issue Date: | 2012 | Source: | Du, Y., Pan, H., Wang, S., Wu, T., Feng, Y. P., Pan, J., et al. (2012). Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device. ACS Nano, 6(3), 2517-2523. | Series/Report no.: | ACS nano | Abstract: | With a thin insulator sandwiched between two electrodes, the negative differential resistance (NDR) behavior has been frequently reported for its potential device applications. Here we report the experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO2. We propose a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer. Current–voltage measurements demonstrated a highly reproducible state at about 0.65 eV, and the photoelectron spectroscopy measurements showed that it complies well with the Ti3d band gap state. Our first-principle calculations confirm that charge storage and release arise from trapping and detrapping of oxygen molecular ions at the defect sites. The results and mechanism demonstrated here in a thin layer could be extended to other systems approaching molecular dimensions for device applications. | URI: | https://hdl.handle.net/10356/96609 http://hdl.handle.net/10220/10328 |
ISSN: | 1936-0851 | DOI: | 10.1021/nn204907t | Rights: | © 2012 American Chemical Society. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | SPMS Journal Articles |
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