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dc.contributor.authorDu, Yuanminen
dc.contributor.authorPan, Huien
dc.contributor.authorWang, Shijieen
dc.contributor.authorWu, Tomen
dc.contributor.authorFeng, Yuan Pingen
dc.contributor.authorPan, Jishengen
dc.contributor.authorWee, Andrew Thye Shenen
dc.identifier.citationDu, Y., Pan, H., Wang, S., Wu, T., Feng, Y. P., Pan, J., et al. (2012). Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device. ACS Nano, 6(3), 2517-2523.en
dc.description.abstractWith a thin insulator sandwiched between two electrodes, the negative differential resistance (NDR) behavior has been frequently reported for its potential device applications. Here we report the experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO2. We propose a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer. Current–voltage measurements demonstrated a highly reproducible state at about 0.65 eV, and the photoelectron spectroscopy measurements showed that it complies well with the Ti3d band gap state. Our first-principle calculations confirm that charge storage and release arise from trapping and detrapping of oxygen molecular ions at the defect sites. The results and mechanism demonstrated here in a thin layer could be extended to other systems approaching molecular dimensions for device applications.en
dc.relation.ispartofseriesACS nanoen
dc.rights© 2012 American Chemical Society.en
dc.titleSymmetrical negative differential resistance behavior of a resistive switching deviceen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
item.fulltextNo Fulltext-
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