Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96609
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dc.contributor.authorDu, Yuanminen
dc.contributor.authorPan, Huien
dc.contributor.authorWang, Shijieen
dc.contributor.authorWu, Tomen
dc.contributor.authorFeng, Yuan Pingen
dc.contributor.authorPan, Jishengen
dc.contributor.authorWee, Andrew Thye Shenen
dc.date.accessioned2013-06-13T04:35:24Zen
dc.date.accessioned2019-12-06T19:32:59Z-
dc.date.available2013-06-13T04:35:24Zen
dc.date.available2019-12-06T19:32:59Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationDu, Y., Pan, H., Wang, S., Wu, T., Feng, Y. P., Pan, J., et al. (2012). Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device. ACS Nano, 6(3), 2517-2523.en
dc.identifier.issn1936-0851en
dc.identifier.urihttps://hdl.handle.net/10356/96609-
dc.description.abstractWith a thin insulator sandwiched between two electrodes, the negative differential resistance (NDR) behavior has been frequently reported for its potential device applications. Here we report the experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO2. We propose a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer. Current–voltage measurements demonstrated a highly reproducible state at about 0.65 eV, and the photoelectron spectroscopy measurements showed that it complies well with the Ti3d band gap state. Our first-principle calculations confirm that charge storage and release arise from trapping and detrapping of oxygen molecular ions at the defect sites. The results and mechanism demonstrated here in a thin layer could be extended to other systems approaching molecular dimensions for device applications.en
dc.language.isoenen
dc.relation.ispartofseriesACS nanoen
dc.rights© 2012 American Chemical Society.en
dc.titleSymmetrical negative differential resistance behavior of a resistive switching deviceen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doi10.1021/nn204907ten
item.grantfulltextnone-
item.fulltextNo Fulltext-
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