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Title: Single-layer MoS2 phototransistors
Authors: Yin, Zongyou
Li, Hai
Li, Hong
Jiang, Lin
Shi, Yumeng
Sun, Yinghui
Lu, Gang
Zhang, Qing
Chen, Xiaodong
Zhang, Hua
Issue Date: 2011
Source: Yin, Z., Li, H., Li, H., Jiang, L., Shi, Y., Sun, Y., et al. (2012). Single-Layer MoS2 Phototransistors. ACS Nano, 6(1), 74-80.
Series/Report no.: ACS nano
Abstract: A new phototransistor based on the mechanically exfoliated single-layer MoS2 nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.
ISSN: 1936-0851
DOI: 10.1021/nn2024557
Rights: © 2011 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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