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|Title:||Single-layer MoS2 phototransistors||Authors:||Yin, Zongyou
|Issue Date:||2011||Source:||Yin, Z., Li, H., Li, H., Jiang, L., Shi, Y., Sun, Y., et al. (2012). Single-Layer MoS2 Phototransistors. ACS Nano, 6(1), 74-80.||Series/Report no.:||ACS nano||Abstract:||A new phototransistor based on the mechanically exfoliated single-layer MoS2 nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.||URI:||https://hdl.handle.net/10356/96679
|ISSN:||1936-0851||DOI:||10.1021/nn2024557||Rights:||© 2011 American Chemical Society.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
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