Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/96679
Title: | Single-layer MoS2 phototransistors | Authors: | Yin, Zongyou Li, Hai Li, Hong Jiang, Lin Shi, Yumeng Sun, Yinghui Lu, Gang Zhang, Qing Chen, Xiaodong Zhang, Hua |
Issue Date: | 2011 | Source: | Yin, Z., Li, H., Li, H., Jiang, L., Shi, Y., Sun, Y., et al. (2012). Single-Layer MoS2 Phototransistors. ACS Nano, 6(1), 74-80. | Series/Report no.: | ACS nano | Abstract: | A new phototransistor based on the mechanically exfoliated single-layer MoS2 nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future. | URI: | https://hdl.handle.net/10356/96679 http://hdl.handle.net/10220/10364 |
ISSN: | 1936-0851 | DOI: | 10.1021/nn2024557 | Schools: | School of Materials Science & Engineering School of Electrical and Electronic Engineering |
Rights: | © 2011 American Chemical Society. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | MSE Journal Articles |
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