Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/96798
Title: | Ultra-thin and flat mica as gate dielectric layers | Authors: | Low, Chong Guan Zhang, Qing |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | Low, C. G., & Zhang, Q. (2012). Ultra-thin and Flat Mica as Gate Dielectric Layers. Small, 8(14), 2178-2183. | Series/Report no.: | Small | Abstract: | Ultra-thin and flat mica-based carbon nanotube field-effect transistors reveal the excellent gate control capability and low leakage current due to the high dielectric constant and high dielectric strength of ultra-thin mica as the gate dielectric. Subthreshold swing of 110 mV/dec and carrier mobility improvement are achieved. The ultra-thin mica retains its surface flatness, indicating the potential application for low-dimensional materials in which surface roughness scattering is significant. | URI: | https://hdl.handle.net/10356/96798 http://hdl.handle.net/10220/10086 |
ISSN: | 1613-6810 | DOI: | 10.1002/smll.201200300 | Rights: | © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles |
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