Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96798
Title: Ultra-thin and flat mica as gate dielectric layers
Authors: Low, Chong Guan
Zhang, Qing
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Low, C. G., & Zhang, Q. (2012). Ultra-thin and Flat Mica as Gate Dielectric Layers. Small, 8(14), 2178-2183.
Series/Report no.: Small
Abstract: Ultra-thin and flat mica-based carbon nanotube field-effect transistors reveal the excellent gate control capability and low leakage current due to the high dielectric constant and high dielectric strength of ultra-thin mica as the gate dielectric. Subthreshold swing of 110 mV/dec and carrier mobility improvement are achieved. The ultra-thin mica retains its surface flatness, indicating the potential application for low-dimensional materials in which surface roughness scattering is significant.
URI: https://hdl.handle.net/10356/96798
http://hdl.handle.net/10220/10086
ISSN: 1613-6810
DOI: 10.1002/smll.201200300
Rights: © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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