Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96798
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dc.contributor.authorLow, Chong Guanen
dc.contributor.authorZhang, Qingen
dc.date.accessioned2013-06-10T02:31:31Zen
dc.date.accessioned2019-12-06T19:35:13Z-
dc.date.available2013-06-10T02:31:31Zen
dc.date.available2019-12-06T19:35:13Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationLow, C. G., & Zhang, Q. (2012). Ultra-thin and Flat Mica as Gate Dielectric Layers. Small, 8(14), 2178-2183.en
dc.identifier.issn1613-6810en
dc.identifier.urihttps://hdl.handle.net/10356/96798-
dc.description.abstractUltra-thin and flat mica-based carbon nanotube field-effect transistors reveal the excellent gate control capability and low leakage current due to the high dielectric constant and high dielectric strength of ultra-thin mica as the gate dielectric. Subthreshold swing of 110 mV/dec and carrier mobility improvement are achieved. The ultra-thin mica retains its surface flatness, indicating the potential application for low-dimensional materials in which surface roughness scattering is significant.en
dc.language.isoenen
dc.relation.ispartofseriesSmallen
dc.rights© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleUltra-thin and flat mica as gate dielectric layersen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.researchCentre of Micro-/Nano-electronics (NOVITAS)en
dc.identifier.doi10.1002/smll.201200300en
item.fulltextNo Fulltext-
item.grantfulltextnone-
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