Please use this identifier to cite or link to this item:
Title: Vertical silicon nanowire diode with nickel silicide induced dopant segregation
Authors: Li, Xiang
Tan, Chuan Seng
Lu, Weijie
Pey, Kin Leong
Wang, Xinpeng
Chen, Zhixian
Navab, Singh
Leong, Kam Chew
Gan, Chee Lip
Issue Date: 2012
Source: Lu, W., Pey, K. L., Wang, X., Li, X., Chen, Z., Navab, S., et al. (2012). Vertical Silicon Nanowire Diode with Nickel Silicide Induced Dopant Segregation. Japanese Journal of Applied Physics, 51.
Series/Report no.: Japanese journal of applied physics
Abstract: Dopant segregated Schottky barrier (DSSB) and Schottky barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated using industry complemetary metal oxide semiconductor field effect transistor (CMOS) processes to investigate the effects of segregated dopants at the silicide/silicon interface and different annealing steps on nickel silicide formation in the DSSB VSiNW diodes. With segregated dopants at the silicide/silicon interface, VSiNW diodes showed higher on-current, due to an enhanced carrier tunneling, and much lower off-current. This can be attributed to the altered energy bands caused by the accumulated Arsenic dopants at the interface. Moreover, DSSB VSiNW diodes also presented ideality factor much closer to unity and exhibited lower electron Schottky barrier height (ΦBn) than SB VSiNW diodes. This proved that interfacial accumulated dopants could impede the inhomogeneous nature of the Schottky diodes and simultaneously, minimize the effect of Fermi level pinning and ionization of surface defect states. Comparing the impact of different silicide formation annealing sequence using DSSB VSiNW diodes, the 2-step anneal process reduces the silicide intrusion length within the SiNW by ∼5× and the silicide interface was smooth along the (100) direction. Furthermore, the 2-step DSSB VSiNW diode also exhibited much lower leakage current and an ideality factor much closer to unity, as compared to the 1-step DSSB VSiNW diode.
ISSN: 0021-4922
DOI: 10.1143/JJAP.51.11PE08
Rights: © 2012 The Japan Society of Applied Physics.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

Citations 50

Updated on Jan 22, 2023

Web of ScienceTM
Citations 50

Updated on Jan 27, 2023

Page view(s) 10

Updated on Jan 31, 2023

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.