Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96863
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dc.contributor.authorArulkumaran, Subramaniamen
dc.contributor.authorNg, Geok Ingen
dc.contributor.authorVicknesh, Sahmuganathanen
dc.contributor.authorWang, Hongen
dc.contributor.authorAng, Kian Siongen
dc.contributor.authorTan, Joyce Pei Yingen
dc.contributor.authorLin, Vivian Kaixinen
dc.contributor.authorTodd, Shaneen
dc.contributor.authorLo, Guo-Qiangen
dc.contributor.authorTripathy, Sudhiranjanen
dc.date.accessioned2013-07-16T08:38:09Zen
dc.date.accessioned2019-12-06T19:35:50Z-
dc.date.available2013-07-16T08:38:09Zen
dc.date.available2019-12-06T19:35:50Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationArulkumaran, S., Ng, G. I., Vicknesh, S., Wang, H., Ang, K. S., Tan, J. P. Y., et al. (2012). Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate. Japanese Journal of Applied Physics, 51.en
dc.identifier.issn0021-4922en
dc.identifier.urihttps://hdl.handle.net/10356/96863-
dc.description.abstractWe report for the first time the DC and microwave characteristics of sub-micron gate (∼0.3 µm) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si(111) substrate. The fabricated sub-micron gate devices on crack-free AlGaN/GaN HEMT structures exhibited good pin.-off characteristics with a maximum drain current density of 853 mA/mm and a maximum extrinsic transconductance of 180 mS/mm. The device exhibited unit current-gain cut-off frequency of 28 GHz, maximum oscillation frequency of 64 GHz and OFF-state breakdown voltage of 60 V. This work demonstrates the feasibility of achieving good performance AlGaN/GaN HEMTs on 8-in. diameter Si(111) for low-cost high-frequency and high-power switching applications.en
dc.language.isoenen
dc.relation.ispartofseriesJapanese journal of applied physicsen
dc.rights© 2012 The Japan Society of Applied Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Japanese journal of applied physics, The Japan Society of Applied Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1143/JJAP.51.111001].en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleDirect current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrateen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.researchTemasek Laboratoriesen
dc.identifier.doi10.1143/JJAP.51.111001en
dc.description.versionAccepted versionen
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item.grantfulltextopen-
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