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Title: Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure
Authors: Liu, Y.
Zhu, Wei
Chen, Tupei
Fung, Stevenson Hon Yuen
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Zhu, W., Chen, T. P., Liu, Y., & Fung, S. H. Y. (2012). Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure. Journal of Applied Physics, 112(6), 063706-.
Series/Report no.: Journal of applied physics
Abstract: In this work, conduction mechanisms of Al/anodic Al oxide/ Al structure, which exhibits resistive switching behavior, have been investigated. The low-resistance state shows ohmic conduction with a metal-like behavior similar to that of pure aluminum. The situation can be explained by the existence of the metallic filament formed by the excess Al in the Al oxide. On the other hand, the high-resistance state (HRS) shows two distinct regimes: ohmic conduction at low fields with a semiconductor-like behavior; and a non-ohmic conduction at high fields. The ohmic conduction of HRS at low fields is attributed to the electron hopping between the states in the oxide with the activation energy of ∼0.23 eV. It is suggested that the conduction of HRS at high fields (the maximum voltage is lower than the set voltage) is due to the field-enhanced thermal excitation of the electrons trapped in the states of the metallic Al nano-phase into the conduction band of the Al oxide or the electron emission from the potential well of the metallic Al nano-phase to the conduction band.
ISSN: 0021-8979
DOI: 10.1063/1.4754011
Schools: School of Electrical and Electronic Engineering 
Rights: © 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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