Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96880
Title: Electronic band structure and effective mass parameters of Ge1−xSnx alloys
Authors: Low, Kain Lu
Yang, Yue
Han, Genquan
Fan, Weijun
Yeo, Yee-Chia
Issue Date: 2012
Source: Low, K. L., Yang, Y., Han, G., Fan, W., & Yeo, Y.-C. (2012). Electronic band structure and effective mass parameters of Ge1−xSnx alloys. Journal of Applied Physics, 112(10), 103715-.
Series/Report no.: Journal of applied physics
Abstract: This work investigates the electronic band structures of bulk Ge1-xSnx alloys using the empirical pseudopotential method (EPM) for Sn composition x varying from 0 to 0.2. The adjustable form factors of EPM were tuned in order to reproduce the band features that agree well with the reported experimental data. Based on the adjusted pseudopotential form factors, the band structures of Ge1-xSnx alloys were calculated along high symmetry lines in the Brillouin zone. The effective masses at the band edges were extracted by using a parabolic line fit. The bowing parameters of hole and electron effective masses were then derived by fitting the effective mass at different Sn compositions by a quadratic polynomial. The hole and electron effective mass were examined for bulk Ge1-xSnx alloys along specific directions or orientations on various crystal planes. In addition, employing the effective-mass Hamiltonian for diamond semiconductor, band edge dispersion at the Γ-point calculated by 8-band k.p. method was fitted to that obtained from EPM approach. The Luttinger-like parameters were also derived for Ge1-xSnx alloys. They were obtained by adjusting the effective-mass parameters of k.p method to fit the k.p band structure to that of the EPM. These effective masses and derived Luttinger parameters are useful for the design of optical and electronic devices based on Ge1-xSnx alloys.
URI: https://hdl.handle.net/10356/96880
http://hdl.handle.net/10220/10110
ISSN: 0021-8979
DOI: 10.1063/1.4767381
Rights: © 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4767381].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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