Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96880
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dc.contributor.authorLow, Kain Luen
dc.contributor.authorYang, Yueen
dc.contributor.authorHan, Genquanen
dc.contributor.authorFan, Weijunen
dc.contributor.authorYeo, Yee-Chiaen
dc.date.accessioned2013-06-10T04:19:27Zen
dc.date.accessioned2019-12-06T19:36:14Z-
dc.date.available2013-06-10T04:19:27Zen
dc.date.available2019-12-06T19:36:14Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationLow, K. L., Yang, Y., Han, G., Fan, W., & Yeo, Y.-C. (2012). Electronic band structure and effective mass parameters of Ge1−xSnx alloys. Journal of Applied Physics, 112(10), 103715-.en
dc.identifier.issn0021-8979en
dc.identifier.urihttps://hdl.handle.net/10356/96880-
dc.identifier.urihttp://hdl.handle.net/10220/10110en
dc.description.abstractThis work investigates the electronic band structures of bulk Ge1-xSnx alloys using the empirical pseudopotential method (EPM) for Sn composition x varying from 0 to 0.2. The adjustable form factors of EPM were tuned in order to reproduce the band features that agree well with the reported experimental data. Based on the adjusted pseudopotential form factors, the band structures of Ge1-xSnx alloys were calculated along high symmetry lines in the Brillouin zone. The effective masses at the band edges were extracted by using a parabolic line fit. The bowing parameters of hole and electron effective masses were then derived by fitting the effective mass at different Sn compositions by a quadratic polynomial. The hole and electron effective mass were examined for bulk Ge1-xSnx alloys along specific directions or orientations on various crystal planes. In addition, employing the effective-mass Hamiltonian for diamond semiconductor, band edge dispersion at the Γ-point calculated by 8-band k.p. method was fitted to that obtained from EPM approach. The Luttinger-like parameters were also derived for Ge1-xSnx alloys. They were obtained by adjusting the effective-mass parameters of k.p method to fit the k.p band structure to that of the EPM. These effective masses and derived Luttinger parameters are useful for the design of optical and electronic devices based on Ge1-xSnx alloys.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of applied physicsen
dc.rights© 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4767381].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.titleElectronic band structure and effective mass parameters of Ge1−xSnx alloysen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doihttp://dx.doi.org/10.1063/1.4767381en
dc.description.versionPublished versionen
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