Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97040
Title: Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors
Authors: Tan, Eu Jin
Pey, Kin Leong
Singh, Navab
Chi, Dong Zhi
Lo, Guo-Qiang
Lee, Pooi See
Hoe, Keat Mun
Chin, Yoke King
Cui, Guangda
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2008
Source: Tan, E. J., Pey, K. L., Singh, N., Chi, D. Z., Lo, G. Q., Lee, P. S., et al. (2008). Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 47(4), 3277-3281.
Series/Report no.: Japanese journal of applied physics
Abstract: Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal silicide S/D. Despite the use of a thick buried oxide (BOX) layer as the gate dielectric, the devices show good electrical characteristics with high Ion/Ioff ratio of ∼105, high drive current of ∼900 µA/µm, which are significantly higher than those previously reported Schottky S/D MOSFETs without barrier-modified junctions. The effect of physical characteristics such as metal-silicided junction depth, number of SiNW channels, and metal–semiconductor junction size were investigated and found to have a direct effect on the electrical performance of the devices. Current transport as a function of Schottky barrier height (Φbeff) modulation was also studied.
URI: https://hdl.handle.net/10356/97040
http://hdl.handle.net/10220/10505
ISSN: 1347-4065
DOI: 10.1143/JJAP.47.3277
Rights: © 2008 The Japan Society of Applied Physics.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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