Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97042
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dc.contributor.authorSilberschmidt, Vadim V.en
dc.contributor.authorXu, Huien
dc.contributor.authorLiu, Changqingen
dc.contributor.authorChen, Zhongen
dc.date.accessioned2013-06-17T04:35:41Zen
dc.date.accessioned2019-12-06T19:38:10Z-
dc.date.available2013-06-17T04:35:41Zen
dc.date.available2019-12-06T19:38:10Z-
dc.date.copyright2009en
dc.date.issued2009en
dc.identifier.citationXu, H., Liu, C., Silberschmidt, V. V., & Chen, Z. (2010). Growth of Intermetallic Compounds in Thermosonic Copper Wire Bonding on Aluminum Metallization. Journal of Electronic Materials, 39(1), 124-131.en
dc.identifier.issn0361-5235en
dc.identifier.urihttps://hdl.handle.net/10356/97042-
dc.identifier.urihttp://hdl.handle.net/10220/10435en
dc.description.abstractInterface evolution caused by thermal aging under different temperatures and durations was investigated by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It was found that approximately 30-nm-thick and discontinuous Cu-Al intermetallic compounds (IMCs) were present in the initial bonds before aging. Cu-Al IMCs grew under thermal aging with increasing aging time. The growth kinetics of the Cu-Al IMCs was correlated to the diffusion process during aging; their combined activation energy was estimated to be 1.01 eV. Initially, Al-rich Cu-Al IMCs formed in the as-bonded state and early stage of aging treatment. Cu9Al4 was identified by selected-area electron diffraction (SAD) as the only type of Cu-Al IMC present after thermal aging at 250°C for 100 h; this is attributed to the relatively short supply of aluminum to the interfacial reaction.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of electronic materialsen
dc.rights© 2009 TMS.en
dc.titleGrowth of intermetallic compounds in thermosonic copper wire bonding on aluminum metallizationen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen
dc.identifier.doihttp://dx.doi.org/10.1007/s11664-009-0951-8en
item.grantfulltextnone-
item.fulltextNo Fulltext-
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