Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/97095| Title: | Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers | Authors: | Kusuma, Damar Yoga Lee, Pooi See |
Issue Date: | 2012 | Source: | Kusuma, D. Y., & Lee, P. S. (2012). Ferroelectric Tunnel Junction Memory Devices made from Monolayers of Vinylidene Fluoride Oligomers. Advanced Materials, 24(30), 4163-4169. | Series/Report no.: | Advanced materials | Abstract: | Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use. | URI: | https://hdl.handle.net/10356/97095 http://hdl.handle.net/10220/10458 |
ISSN: | 1521-4095 | DOI: | 10.1002/adma.201104476 | Schools: | School of Materials Science & Engineering | Rights: | © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
| Appears in Collections: | MSE Journal Articles |
SCOPUSTM
Citations
10
42
Updated on Mar 5, 2025
Web of ScienceTM
Citations
10
41
Updated on Oct 31, 2023
Page view(s) 20
722
Updated on Mar 15, 2025
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.