Please use this identifier to cite or link to this item:
Title: Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications
Authors: He, Qiyuan
Zeng, Zhiyuan
Yin, Zongyou
Li, Hai
Wu, Shixin
Huang, Xiao
Zhang, Hua
Issue Date: 2012
Source: He, Q., Zeng, Z., Yin, Z., Li, H., Wu, S., Huang, X., et al. (2012). Fabrication of Flexible MoS2 Thin-Film Transistor Arrays for Practical Gas-Sensing Applications. Small, 8(19), 2994-2999.
Series/Report no.: Small
Abstract: By combining two kinds of solution-processable two-dimensional materials, a flexible transistor array is fabricated in which MoS2 thin film is used as the active channel and reduced graphene oxide (rGO) film is used as the drain and source electrodes. The simple device configuration and the 1.5 mm-long MoS2 channel ensure highly reproducible device fabrication and operation. This flexible transistor array can be used as a highly sensitive gas sensor with excellent reproducibility. Compared to using rGO thin film as the active channel, this new gas sensor exhibits much higher sensitivity. Moreover, functionalization of the MoS2 thin film with Pt nanoparticles further increases the sensitivity by up to ∼3 times. The successful incorporation of a MoS2 thin-film into the electronic sensor promises its potential application in various electronic devices.
ISSN: 1613-6810
DOI: 10.1002/smll.201201224
Rights: © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.