Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97110
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dc.contributor.authorZhan, Daen
dc.contributor.authorYan, Jiaxuen
dc.contributor.authorLai, Linfeien
dc.contributor.authorNi, Zhenhuaen
dc.contributor.authorLiu, Leien
dc.contributor.authorShen, Zexiangen
dc.date.accessioned2013-06-17T06:33:38Zen
dc.date.accessioned2019-12-06T19:39:03Z-
dc.date.available2013-06-17T06:33:38Zen
dc.date.available2019-12-06T19:39:03Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationZhan, D., Yan, J., Lai, L., Ni, Z., Liu, L., & Shen, Z. (2012). Engineering the Electronic Structure of Graphene. Advanced Materials, 24(30), 4055-4069.en
dc.identifier.issn1521-4095en
dc.identifier.urihttps://hdl.handle.net/10356/97110-
dc.description.abstractGraphene exhibits many unique electronic properties owing to its linear dispersive electronic band structure around the Dirac point, making it one of the most studied materials in the last 5-6 years. However, for many applications of graphene, further tuning its electronic band structure is necessary and has been extensively studied ever since graphene was first isolated experimentally. Here we review the major progresses made in electronic structure engineering of graphene, namely by electric and magnetic fields, chemical intercalation and adsorption, stacking geometry, edge-chirality, defects, as well as strain.en
dc.language.isoenen
dc.relation.ispartofseriesAdvanced materialsen
dc.rights© 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.titleEngineering the electronic structure of grapheneen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doi10.1002/adma.201200011en
item.fulltextNo Fulltext-
item.grantfulltextnone-
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