Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97137
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dc.contributor.authorHong, Leien
dc.contributor.authorRuslien
dc.contributor.authorYu, Hongyuen
dc.contributor.authorWang, Xincaien
dc.contributor.authorWang, Haoen
dc.contributor.authorZheng, Hongyuen
dc.date.accessioned2013-07-17T02:13:50Zen
dc.date.accessioned2019-12-06T19:39:18Z-
dc.date.available2013-07-17T02:13:50Zen
dc.date.available2019-12-06T19:39:18Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationHong, L., Rusli, Yu, H., Wang, X., Wang, H., & Zheng, H. (2012). Surface Nanostructure Optimization for GaAs Solar Cell Application. Japanese Journal of Applied Physics, 51.en
dc.identifier.issn0021-4922en
dc.identifier.urihttps://hdl.handle.net/10356/97137-
dc.identifier.urihttp://hdl.handle.net/10220/11636en
dc.description.abstractNumerical simulation of optical absorption characteristics of gallium arsenide (GaAs) thin-film solar cells by the three-dimensional finite element method is presented, with emphasis on optimizing geometric parameters for nanowire and nanocone structures to maximize the ultimate photocurrent under AM1.5G illumination. The nanostructure-based GaAs thin-film solar cells have demonstrated a much higher photocurrent than the planar thin films owing to their much suppressed reflection and high light trapping capability. The nanowire structure achieves its highest ultimate photocurrent of 29.43 mA/cm2 with a periodicity (P) of 300 nm and a wire diameter of 180 nm. In contrast, the nanocone array structure offers the best performance with an ultimate photocurrent of 32.14 mA/cm2. The results obtained in this work provide useful guidelines for the design of high-efficiency nanostructure-based GaAs solar cells.en
dc.language.isoenen
dc.relation.ispartofseriesJapanese journal of applied physicsen
dc.rights© 2012 The Japan Society of Applied Physics.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleSurface nanostructure optimization for GaAs solar cell applicationen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationA*STAR SIMTechen
dc.identifier.doi10.1143/JJAP.51.10ND13en
item.fulltextNo Fulltext-
item.grantfulltextnone-
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