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dc.contributor.authorPey, Kin Leongen
dc.contributor.authorLee, Pooi Seeen
dc.contributor.authorMangelinck, D.en
dc.contributor.authorOsipowitcz, T.en
dc.identifier.citationMangelinck, D., Lee, P. S., Osipowitcz, T., & Pey, K. L. (2004). Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 215(3-4), 495-500.en
dc.description.abstractA method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed.en
dc.relation.ispartofseriesNuclear instruments and methods in Physics research Section B: beam interactions with materials and atomsen
dc.rights© 2003 Elsevier B.V.en
dc.titleAnalysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometryen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Materials Science and Engineeringen
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