Please use this identifier to cite or link to this item:
Title: Morphology and kinetic study of the interfacial reaction between the Sn-3.5Ag solder and electroless Ni-P metallization
Authors: Chen, Zhong
He, Min
Qi, Guojun
Issue Date: 2004
Source: Chen, Z., He, M., & Qi, G. (2004). Morphology and kinetic study of the interfacial reaction between the Sn-3.5Ag solder and electroless Ni-P metallization. Journal of Electronic Materials, 33(12), 1465-1472.
Series/Report no.: Journal of electronic materials
Abstract: This work summarizes the interfacial reaction between lead-free solder Sn-3.5Ag and electrolessly plated Ni-P metallization in terms of morphology and growth kinetics of the intermetallic compounds (IMC). Comparison with pure Ni metallization is made in order to clarify the role of P in the solder reaction. During reflow, the IMCs formed with the Ni-P under-bump metallization (UBM) exist in chunky crystal blocks and small crystal agglomerates, while the ones with the sputtered Ni UBM exhibit uniformly scallop grains with faceted surfaces. The IMC thickness increases with reflow time following approximately a t1/3 power law for both systems. The IMC growth rate is higher with the Ni-P UBM than the Ni UBM. The thickness of the Ni3Sn4 layer increases linearly with the square root of thermal aging time, indicating that the growth of the IMCs is a diffusion-controlled process. The activation energy for Ni3Sn4 growth in solid-state reaction is found to be 110 kJ/mol and 91 kJ/mol for the Ni-P and sputtered Ni UBMs, respectively. Kirkendall voids are detected inside the Ni3P layer in the Sn-3.5Ag/Ni-P system. No such voids are found in the Sn-3.5Ag/Ni system.
ISSN: 0361-5235
DOI: 10.1007/s11664-004-0088-8
Rights: © 2004 TMS.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles
SIMTech Journal Articles

Citations 50

Updated on Feb 25, 2021

Citations 50

Updated on Mar 3, 2021

Page view(s) 10

Updated on Mar 5, 2021

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.