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|Title:||Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack||Authors:||Mangelinck, D.
Dai, J. Y.
Lee, Pooi See
Pey, Kin Leong
Chi, Dong Zhi
|Issue Date:||2002||Source:||Lee, P. S., Mangelinck, D., Pey, K. L., Ding, J., Chi, D. Z., Osipowicz, T., et al. (2002). Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack. Microelectronic engineering, 60(1-2), 171-181.||Series/Report no.:||Microelectronic engineering||Abstract:||The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation.||URI:||https://hdl.handle.net/10356/97202
|ISSN:||0167-9317||DOI:||10.1016/S0167-9317(01)00592-5||Rights:||© 2002 Elsevier B.V.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
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