Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97202
Title: Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack
Authors: Mangelinck, D.
Osipowicz, T.
Dai, J. Y.
See, A.
Lee, Pooi See
Pey, Kin Leong
Ding, Jun
Chi, Dong Zhi
Issue Date: 2002
Source: Lee, P. S., Mangelinck, D., Pey, K. L., Ding, J., Chi, D. Z., Osipowicz, T., et al. (2002). Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack. Microelectronic engineering, 60(1-2), 171-181.
Series/Report no.: Microelectronic engineering
Abstract: The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation.
URI: https://hdl.handle.net/10356/97202
http://hdl.handle.net/10220/10542
ISSN: 0167-9317
DOI: 10.1016/S0167-9317(01)00592-5
Rights: © 2002 Elsevier B.V.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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