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https://hdl.handle.net/10356/97202
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mangelinck, D. | en |
dc.contributor.author | Osipowicz, T. | en |
dc.contributor.author | Dai, J. Y. | en |
dc.contributor.author | See, A. | en |
dc.contributor.author | Lee, Pooi See | en |
dc.contributor.author | Pey, Kin Leong | en |
dc.contributor.author | Ding, Jun | en |
dc.contributor.author | Chi, Dong Zhi | en |
dc.date.accessioned | 2013-06-24T07:24:22Z | en |
dc.date.accessioned | 2019-12-06T19:40:09Z | - |
dc.date.available | 2013-06-24T07:24:22Z | en |
dc.date.available | 2019-12-06T19:40:09Z | - |
dc.date.copyright | 2002 | en |
dc.date.issued | 2002 | en |
dc.identifier.citation | Lee, P. S., Mangelinck, D., Pey, K. L., Ding, J., Chi, D. Z., Osipowicz, T., et al. (2002). Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack. Microelectronic engineering, 60(1-2), 171-181. | en |
dc.identifier.issn | 0167-9317 | en |
dc.identifier.uri | https://hdl.handle.net/10356/97202 | - |
dc.description.abstract | The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation. | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Microelectronic engineering | en |
dc.rights | © 2002 Elsevier B.V. | en |
dc.title | Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack | en |
dc.type | Journal Article | en |
dc.contributor.school | School of Materials Science & Engineering | en |
dc.identifier.doi | 10.1016/S0167-9317(01)00592-5 | en |
item.fulltext | No Fulltext | - |
item.grantfulltext | none | - |
Appears in Collections: | MSE Journal Articles |
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