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Title: Optical and electrical applications of ZnSxSe1−x nanowires-network with uniform and controllable stoichiometry
Authors: Lu, Junpeng
Liu, Hongwei
Sun, Cheng
Zheng, Minrui
Nripan, Mathews
Chen, Gin Seng
Subodh Gautam Mhaisalkar
Zhang, Xinhai
Sow, Chorng Haur
Issue Date: 2012
Source: Lu, J., Liu, H., Sun, C., Zheng, M., Nripan, M., Chen, G. S., et al. (2012). Optical and electrical applications of ZnSxSe1−x nanowires-network with uniform and controllable stoichiometry. Nanoscale, 4(3), 976-981.
Series/Report no.: Nanoscale
Abstract: Single crystalline ternary ZnSxSe1−x nanowires with uniform chemical stoichiometry and accurately controllable compositions (0≤ x ≤ 1) were synthesized through a simple and yet effective one-step approach with a specially designed modification. Energy-gap-tuning via compositional change was achieved for a direct band gap from 2.6 to 3.6 eV. Raman spectroscopy studies revealed typical two-mode behavior indicative of high miscibility in the alloyed compound. Moreover, the enhanced electrical-conductivity and gating effect behavior after the formation of ternary alloy enable their application in nano/micro-field effect transistor devices. In addition, the slow recombination rate in the photo-response process indicates their potential for photoelectric applications.
ISSN: 2040-3364
DOI: 10.1039/c2nr11459c
Rights: © 2012 The Royal Society of Chemistry.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles


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