Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97258
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dc.contributor.authorYuan, C. L.en
dc.contributor.authorDarmawan, P.en
dc.contributor.authorChan, Mei Yinen
dc.contributor.authorLee, Pooi Seeen
dc.date.accessioned2013-06-19T08:47:35Zen
dc.date.accessioned2019-12-06T19:40:39Z-
dc.date.available2013-06-19T08:47:35Zen
dc.date.available2019-12-06T19:40:39Z-
dc.date.copyright2007en
dc.date.issued2007en
dc.identifier.citationYuan, C. L., Darmawan, P., Chan, M. Y., & Lee, P. S. (2007). Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation. Europhysics letters (EPL), 77(6).en
dc.identifier.issn0295-5075en
dc.identifier.urihttps://hdl.handle.net/10356/97258-
dc.description.abstractAmorphous Lu2O3 thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of 4×10−5 A/cm2 at 1 V accumulation bias was obtained for 4.5 nm thick Lu2O3 thin film deposited at room temperature followed by post-deposition anneal (PDA) at 600 °C in oxygen ambient. The leakage conduction mechanisms of amorphous Lu2O3 films were investigated. It was found that the Poole-Frenkel (P-F) emission is the dominant conduction mechanism at high electric field region.en
dc.relation.ispartofseriesEurophysics letters (EPL)en
dc.rights© 2007 EPLA.en
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin filmsen
dc.titleLeakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablationen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1209/0295-5075/77/67001en
item.fulltextNo Fulltext-
item.grantfulltextnone-
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