Please use this identifier to cite or link to this item:
Title: Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation
Authors: Mangelinck, D.
Dai, J. Y.
See, A.
Lee, Pooi See
Pey, Kin Leong
Ding, Jun
Chi, Dong Zhi
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2001
Source: Lee, P. S., Mangelinck, D., Pey, K. L., Ding, J., Chi, D. Z., Dai, J. Y., et al. (2001). Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation. Journal of electronic materials, 30(12), 1554-1559.
Series/Report no.: Journal of electronic materials
Abstract: The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.
ISSN: 0361-5235
DOI: 10.1007/s11664-001-0173-1
Rights: © 2001 TMS.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

Citations 10

Updated on Mar 5, 2021

Citations 20

Updated on Mar 3, 2021

Page view(s) 10

Updated on Sep 21, 2021

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.