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|Title:||Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation||Authors:||Mangelinck, D.
Dai, J. Y.
Lee, Pooi See
Pey, Kin Leong
Chi, Dong Zhi
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials||Issue Date:||2001||Source:||Lee, P. S., Mangelinck, D., Pey, K. L., Ding, J., Chi, D. Z., Dai, J. Y., et al. (2001). Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation. Journal of electronic materials, 30(12), 1554-1559.||Series/Report no.:||Journal of electronic materials||Abstract:||The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.||URI:||https://hdl.handle.net/10356/97263
|ISSN:||0361-5235||DOI:||10.1007/s11664-001-0173-1||Rights:||© 2001 TMS.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
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