Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97270
Title: Spontaneous growth and phase transformation of highly conductive nickel germanide nanowires
Authors: Higgins, Jeremy M.
Faber, Matthew S.
Yan, Chaoyi
Lee, Pooi See
Jin, Song
Issue Date: 2011
Source: Yan, C., Higgins, J. M., Faber, M. S., Lee, P. S., & Jin, S. (2011). Spontaneous Growth and Phase Transformation of Highly Conductive Nickel Germanide Nanowires. ACS Nano, 5(6), 5006-5014.
Series/Report no.: ACS nano
Abstract: We report the synthesis, phase transformation, and electrical property measurement of single-crystal NiGe and ε-Ni5Ge3 nanowires (NWs). NiGe NWs were spontaneously synthesized by chemical vapor deposition of GeH4 onto a porous Ni substrate without the use of intentional catalysts. The as-grown NWs of the orthorhombic NiGe phase were transformed to the hexagonal ε-Ni5Ge3 phase by thermal annealing induced Ni enrichment. This controllable conversion of germanide phases is desirable for phase-dependent property study and applications, and the observation of novel metastable ε-Ni5Ge3 phase suggests the importance of kinetic factors in such nanophase transformations. Electrical studies reveal that NiGe NWs are highly conductive, with an average resistivity of 35 ± 15 μΩ·cm, while the resistivity of ε-Ni5Ge3 NWs is more than 4 times that of the NiGe phase. NWs of nickel germanides, particularly NiGe, would be useful building blocks for germanium-based nanoelectronic devices.
URI: https://hdl.handle.net/10356/97270
http://hdl.handle.net/10220/10448
ISSN: 1936-0851
DOI: 10.1021/nn201108u
Rights: © 2011 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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