Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97279
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dc.contributor.authorYuan, C. L.en
dc.contributor.authorLee, Pooi Seeen
dc.date.accessioned2013-06-24T07:06:41Zen
dc.date.accessioned2019-12-06T19:40:51Z-
dc.date.available2013-06-24T07:06:41Zen
dc.date.available2019-12-06T19:40:51Z-
dc.date.copyright2008en
dc.date.issued2008en
dc.identifier.citationYuan, C. L., & Lee, P. S. (2008). Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure. Nanotechnology, 19(35).en
dc.identifier.issn0957-4484en
dc.identifier.urihttps://hdl.handle.net/10356/97279-
dc.description.abstractA Ge/GeO2 core/shell nanostructure embedded in an Al2O3 gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal–insulator–semiconductor (MIS) capacitor for Ge/GeO2 core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO2 shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering.en
dc.language.isoenen
dc.relation.ispartofseriesNanotechnologyen
dc.rights© 2008 IOP Publishing Ltd.en
dc.titleEnhanced charge storage capability of Ge/GeO2 core/shell nanostructureen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1088/0957-4484/19/35/355206en
item.grantfulltextnone-
item.fulltextNo Fulltext-
Appears in Collections:MSE Journal Articles

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