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Title: Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers
Authors: Ji, Y.
Kyaw, Z. B.
Lu, S. P.
Zhang, Y. P.
Zhu, B. B.
Ju, Zhengang
Liu, Wei
Zhang, Zi-Hui
Tan, Swee Tiam
Zhang, Xueliang
Namig, Hasanov
Sun, Xiaowei
Demir, Hilmi Volkan
Issue Date: 2013
Source: Ju, Z. G., Liu, W., Zhang, Z.-H., Tan, S. T., Ji, Y., Kyaw, Z. B., et al. (2013). Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers. Applied physics letters, 102(24), 243504-.
Series/Report no.: Applied physics letters
Abstract: InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in the hole distribution and thus, radiative recombination rates across the active region. Consequently, the efficiency droop was reduced to 28.4% at a current density of 70 A/cm2, which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 mW for the GTQB LEDs at 70 A/cm2. © 2013 AIP Publishing LLC.
ISSN: 0003-6951
DOI: 10.1063/1.4811698
Rights: © 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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