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|Title:||In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C||Authors:||Mangelinck, D.
Lee, Pooi See
Pey, Kin Leong
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2003||Source:||Lee, P. S., Pey, K. L., Mangelinck, D., Ding, J., & Chan, L. (2003). In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C. Solid State Communications, 128(9-10), 325-328.||Series/Report no.:||Solid state communications||Abstract:||The key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low temperature range of less than 400 °C was evaluated. The XRD results show that the solid state reaction started with a outdiffusion of Ni from the Ni(Pt) alloy during the formation of Ni2Si prior to the formation of Ni(Pt)Si. This in situ technique is important for the characterization and the study of the nucleation and kinetics of the first phase formation of advanced alloy silicides.||URI:||https://hdl.handle.net/10356/97334
|ISSN:||0038-1098||DOI:||10.1016/j.ssc.2003.09.004||Rights:||© 2003 Elsevier Ltd.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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