Please use this identifier to cite or link to this item:
|Title:||Improved pentacene device characteristics with sol–gel SiO2 dielectric films||Authors:||Cahyadi, Tommy
Tan, H. S.
Namdas, E. B.
Mhaisalkar, Subodh Gautam
Lee, Pooi See
Chen, Z. K.
Ng, C. M.
Boey, Freddy Yin Chiang
|Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films||Issue Date:||2006||Source:||Cahyadi, T., Tan, H. S., Namdas, E. B., Mhaisalkar, S. G., Lee, P. S., Chen, Z. K., Ng, C. M., & Boey, F. Y. C. (2007). Improved pentacene device characteristics with sol–gel SiO2 dielectric films. Organic electronics, 8(4), 455-459.||Series/Report no.:||Organic electronics||Abstract:||The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol–gel SiO2 as inorganic capping layer to significantly improve device characteristics of pentacene-based FETs. The smoother film surfaces of sol–gel SiO2 (1.9 Å root-mean-square) induced larger pentacene grain sizes, and led to hole mobilities of 1.43 cm2/Vs, on–off ratio of 107, and a subthreshold swing of 102 mV/decade when operating at −20 V.||URI:||https://hdl.handle.net/10356/97335
|ISSN:||1566-1199||DOI:||10.1016/j.orgel.2006.12.006||Rights:||© 2006 Elsevier B.V.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.