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https://hdl.handle.net/10356/97335
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cahyadi, Tommy | en |
dc.contributor.author | Tan, H. S. | en |
dc.contributor.author | Namdas, E. B. | en |
dc.contributor.author | Mhaisalkar, Subodh Gautam | en |
dc.contributor.author | Lee, Pooi See | en |
dc.contributor.author | Chen, Z. K. | en |
dc.contributor.author | Ng, C. M. | en |
dc.contributor.author | Boey, Freddy Yin Chiang | en |
dc.date.accessioned | 2013-06-19T04:25:58Z | en |
dc.date.accessioned | 2019-12-06T19:41:36Z | - |
dc.date.available | 2013-06-19T04:25:58Z | en |
dc.date.available | 2019-12-06T19:41:36Z | - |
dc.date.copyright | 2006 | en |
dc.date.issued | 2006 | en |
dc.identifier.citation | Cahyadi, T., Tan, H. S., Namdas, E. B., Mhaisalkar, S. G., Lee, P. S., Chen, Z. K., Ng, C. M., & Boey, F. Y. C. (2007). Improved pentacene device characteristics with sol–gel SiO2 dielectric films. Organic electronics, 8(4), 455-459. | en |
dc.identifier.issn | 1566-1199 | en |
dc.identifier.uri | https://hdl.handle.net/10356/97335 | - |
dc.description.abstract | The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol–gel SiO2 as inorganic capping layer to significantly improve device characteristics of pentacene-based FETs. The smoother film surfaces of sol–gel SiO2 (1.9 Å root-mean-square) induced larger pentacene grain sizes, and led to hole mobilities of 1.43 cm2/Vs, on–off ratio of 107, and a subthreshold swing of 102 mV/decade when operating at −20 V. | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Organic electronics | en |
dc.rights | © 2006 Elsevier B.V. | en |
dc.subject | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films | en |
dc.title | Improved pentacene device characteristics with sol–gel SiO2 dielectric films | en |
dc.type | Journal Article | en |
dc.contributor.school | School of Materials Science & Engineering | en |
dc.identifier.doi | 10.1016/j.orgel.2006.12.006 | en |
item.fulltext | No Fulltext | - |
item.grantfulltext | none | - |
Appears in Collections: | MSE Journal Articles |
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