Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97343
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dc.contributor.authorYuan, C. L.en
dc.contributor.authorDarmawan, P.en
dc.contributor.authorSetiawan, Y.en
dc.contributor.authorLee, Pooi Seeen
dc.date.accessioned2013-06-19T03:34:58Zen
dc.date.accessioned2019-12-06T19:41:41Z-
dc.date.available2013-06-19T03:34:58Zen
dc.date.available2019-12-06T19:41:41Z-
dc.date.copyright2006en
dc.date.issued2006en
dc.identifier.citationYuan, C. L., Darmawan, P., Setiawan, Y., & Lee, P. S. (2006). A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation. Europhysics Letters (EPL), 74(1), 177-180.en
dc.identifier.issn0295-5075en
dc.identifier.urihttps://hdl.handle.net/10356/97343-
dc.description.abstractWe have successfully developed a novel method to fabricate the memory structure of Ge nanocrystals embedded in amorphous Lu2O3 high-k dielectric using pulsed laser ablation. The mean size and aerial density of the Ge nanocrystals are estimated to be about 9 nm and 7 × 1011 cm−2, respectively. Good performances in terms of large memory window and long data retention were observed. Our preparation method is simple, fast and economical.en
dc.language.isoenen
dc.relation.ispartofseriesEurophysics letters (EPL)en
dc.rights© 2006 EDP Sciences.en
dc.subjectDRNTU::Engineering::Materials::Nanostructured materialsen
dc.titleA simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablationen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1209/epl/i2005-10505-4en
item.fulltextNo Fulltext-
item.grantfulltextnone-
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