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|Title:||Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field||Authors:||Fan, Weijun||Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Fan, W. (2012). Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field. 2012 7th International Conference on Electrical and Computer Engineering.||Abstract:||A 10-band k.p formula including electric field effect is introduced to calculate the band structures and optical gain of multilayer dilute nitride semiconductors. The band structure and optical gain of 70 Å In0.37Ga0.63As0.975N0.025 compressive strain quantum well with tensile strained 200 Å GaAs0.997N0.003 barrier with emission wavelength at 1.3 um are investigated. Under an electric field of 100 keV/cm, the fundamental interband transition Stark shift is calculated, the red shift is about 140.5 meV. The peak gain is greatly decreased from 4396 cm-1 to 865 cm-1 for carrier concentration of 8×1018 cm-3. If considering dielectric effect, the effective electric field is 7.22 keV/cm, the Stark shift is greatly depressed to 1.6 meV and peak gain is slightly decreased to 4226 cm-1.||URI:||https://hdl.handle.net/10356/97355
|DOI:||10.1109/ICECE.2012.6471559||Rights:||© 2012 IEEE.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Conference Papers|
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