Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97355
Title: Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field
Authors: Fan, Weijun
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Fan, W. (2012). Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field. 2012 7th International Conference on Electrical and Computer Engineering.
Abstract: A 10-band k.p formula including electric field effect is introduced to calculate the band structures and optical gain of multilayer dilute nitride semiconductors. The band structure and optical gain of 70 Å In0.37Ga0.63As0.975N0.025 compressive strain quantum well with tensile strained 200 Å GaAs0.997N0.003 barrier with emission wavelength at 1.3 um are investigated. Under an electric field of 100 keV/cm, the fundamental interband transition Stark shift is calculated, the red shift is about 140.5 meV. The peak gain is greatly decreased from 4396 cm-1 to 865 cm-1 for carrier concentration of 8×1018 cm-3. If considering dielectric effect, the effective electric field is 7.22 keV/cm, the Stark shift is greatly depressed to 1.6 meV and peak gain is slightly decreased to 4226 cm-1.
URI: https://hdl.handle.net/10356/97355
http://hdl.handle.net/10220/11842
DOI: 10.1109/ICECE.2012.6471559
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

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