Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97437
Title: Development of near-field emission limit from radiated-emission limit based on statistical approach
Authors: See, Kye Yak
Fang, Ning
Wang, Lin Biao
Soh, Wei-Shan
Svimonishvili, Tengiz
Oswal, Manish
Chang, Weng-Yew
Koh, Wee Jin
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: See, K.-Y., Fang, N., Wang, L.-B., Soh, W., Svimonishvili, T., Oswal, M., et al. (2012). Development of near-field emission limit from radiated-emission limit based on statistical approach. 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS).
Abstract: This paper discusses a novel approach to transforming a radiated-emission limit (e.g., CISPR 22 and FCC) from the far-field to the near-field region. The proposed approach combines data from a near-field scanner and a gigahertz transverse electromagnetic cell with statistics to establish a simple relationship between a near-field magnetic field and a far-field electric field. It is shown that the proposed approach has the potential to be a simple, quick, and fairly inexpensive tool for electromagnetic compatibility pre-compliance purposes.
URI: https://hdl.handle.net/10356/97437
http://hdl.handle.net/10220/12006
DOI: 10.1109/EDAPS.2012.6469388
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

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