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|Title:||Electrical properties of InSbN alloys fabricated by two-step ion implantation||Authors:||Wang, Youyi
Zhang, Dao Hua
Jin, Y. J.
Chen, X. Z.
Li, J. H.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Wang, Y., Zhang, D. H., Jin, Y. J., Chen, X. Z., & Li, J. H. (2012). Electrical Properties of InSbN Alloys Fabricated by Two-Step Ion Implantation. Advanced Materials Research, 569, 305-310.||Series/Report no.:||Advanced materials research||Abstract:||We report the electrical properties of the InSbN alloys fabricated by two-step implantation of nitrogen ions into InSb wafers, characterized by Hall measurements. The alloy with higher implanted dose shows lower electron concentration due to the acceptor nature of nitrogen. At temperatures below 150 K, the electron concentration does not change and follows an exponential relation at above 200 K. The Hall mobility in all samples monotonically decreases with the increase of temperature, indicating the phonon dominating scattering mechanism. The annealing results reveal that annealing temperatures up to 598 K make the carrier concentration lower due to the reduction of donor-type defects caused by ion implantation and the acceptor nature of nitrogen.||URI:||https://hdl.handle.net/10356/97460
|ISSN:||1662-8985||DOI:||10.4028/www.scientific.net/AMR.569.305||Rights:||© 2012 Trans Tech Publications, Switzerland.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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