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|Title:||Incommensurate van der Waals epitaxy of nanowire arrays : a case study with ZnO on muscovite mica substrates||Authors:||Belarre, Francisco J.
Utama, Muhammad Iqbal Bakti
|Issue Date:||2012||Source:||Utama, M. I. B., Belarre, F. J., Magen, C., Peng, B., Arbiol, J., & Xiong, Q. (2012). Incommensurate van der Waals Epitaxy of Nanowire Arrays: A Case Study with ZnO on Muscovite Mica Substrates. Nano Letters, 12(4), 2146-2152.||Series/Report no.:||Nano letters||Abstract:||The requirement of lattice matching between a material and its substrate for the growth of defect-free heteroepitaxial crystals can be circumvented with van der Waals epitaxy (vdWE). However, the utilization and characteristics of vdWE in nonlamellar/nonplanar nanoarchitectures are still not very well-documented. Here we establish the characteristics of vdWE in nanoarchitectures using a case study of ZnO nanowire (NW) array on muscovite mica substrate without any buffer/seed layer. With extensive characterizations involving electron microscopy, diffractometry, and the related analyses, we conclude that the NWs grown via vdWE exhibit an incommensurate epitaxy. The incommensurate vdWE allows a nearly complete lattice relaxation at the NW-substrate heterointerface without any defects, thus explaining the unnecessity of lattice matching for well-crystallized epitaxial NWs on muscovite mica. We then determine the polarity of the NW via a direct visualization of Zn–O dumbbells using the annular bright field scanning transmission electron miscroscopy (ABF-STEM) in order to identify which atoms are at the base of the NWs and responsible for the van der Waals interactions. The information from the ABF-STEM is then used to construct the proper atomic arrangement at the heterointerface with a 3D atomic modeling to corroborate the characteristics of the incommensurate vdWE. Our findings suggest that the vdWE might be extended for a wider varieties of compounds and epitaxial nanoarchitectures to serve as a universal epitaxy strategy.||URI:||https://hdl.handle.net/10356/97462
|ISSN:||1530-6984||DOI:||10.1021/nl300554t||Rights:||© 2012 American Chemical Society.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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