Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97482
Title: Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates
Authors: Liu, Keng-Ku
Zhang, Wenjing
Lee, Yi-Hsien
Lin, Yu-Chuan
Chang, Mu-Tung
Su, Ching-Yuan
Chang, Chia-Seng
Li, Hai
Shi, Yumeng
Zhang, Hua
Lai, Chao-Sung
Li, Lain-Jong
Issue Date: 2012
Source: Liu, K.-K., Zhang, W., Lee, Y.-H., Lin, Y.-C., Chang, M.-T., Su, C.-Y., et al. (2012). Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates. Nano Letters, 12(3), 1538-1544.
Series/Report no.: Nano letters
Abstract: The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS2 thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS2 sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS2 layer is comparable with those of the micromechanically exfoliated thin sheets from MoS2 crystals. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.
URI: https://hdl.handle.net/10356/97482
http://hdl.handle.net/10220/10712
ISSN: 1530-6984
DOI: 10.1021/nl2043612
Rights: © 2012 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

SCOPUSTM   
Citations 1

1,626
Updated on Jan 30, 2023

Web of ScienceTM
Citations 1

1,564
Updated on Jan 27, 2023

Page view(s) 5

939
Updated on Jan 31, 2023

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.