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https://hdl.handle.net/10356/97482
Title: | Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates | Authors: | Liu, Keng-Ku Zhang, Wenjing Lee, Yi-Hsien Lin, Yu-Chuan Chang, Mu-Tung Su, Ching-Yuan Chang, Chia-Seng Li, Hai Shi, Yumeng Zhang, Hua Lai, Chao-Sung Li, Lain-Jong |
Issue Date: | 2012 | Source: | Liu, K.-K., Zhang, W., Lee, Y.-H., Lin, Y.-C., Chang, M.-T., Su, C.-Y., et al. (2012). Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates. Nano Letters, 12(3), 1538-1544. | Series/Report no.: | Nano letters | Abstract: | The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS2 thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS2 sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS2 layer is comparable with those of the micromechanically exfoliated thin sheets from MoS2 crystals. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers. | URI: | https://hdl.handle.net/10356/97482 http://hdl.handle.net/10220/10712 |
ISSN: | 1530-6984 | DOI: | 10.1021/nl2043612 | Rights: | © 2012 American Chemical Society. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | MSE Journal Articles |
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