Please use this identifier to cite or link to this item:
Title: Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates
Authors: Liu, Keng-Ku
Zhang, Wenjing
Lee, Yi-Hsien
Lin, Yu-Chuan
Chang, Mu-Tung
Su, Ching-Yuan
Chang, Chia-Seng
Li, Hai
Shi, Yumeng
Zhang, Hua
Lai, Chao-Sung
Li, Lain-Jong
Issue Date: 2012
Source: Liu, K.-K., Zhang, W., Lee, Y.-H., Lin, Y.-C., Chang, M.-T., Su, C.-Y., et al. (2012). Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates. Nano Letters, 12(3), 1538-1544.
Series/Report no.: Nano letters
Abstract: The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS2 thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS2 sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS2 layer is comparable with those of the micromechanically exfoliated thin sheets from MoS2 crystals. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.
ISSN: 1530-6984
DOI: 10.1021/nl2043612
Rights: © 2012 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

Citations 1

Updated on Jun 18, 2020

Citations 1

Updated on Mar 6, 2021

Page view(s) 10

Updated on Jul 30, 2021

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.