Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97507
Title: Size-suppressed dielectrics of Ge nanocrystals : skin-deep quantum entrapment
Authors: Goh, Eunice S. M.
Yang, H. Y.
Liu, Y.
Chen, Tupei
Sun, Changqing
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Goh, E. S. M., Chen, T., Yang, H. Y., Liu, Y., & Sun, C. (2012). Size-suppressed dielectrics of Ge nanocrystals : skin-deep quantum entrapment. Nanoscale, 4(4), 1308-1311.
Series/Report no.: Nanoscale
Abstract: Although the dielectric behavior of nanostructured semiconductors has been intensively investigated, the physics behind observations remains disputed with possible mechanisms such as quantum confinement and dangling bond polarization. Here we show that theoretical reproduction of the measured dielectric suppression of Ge nanocrystals asserts that the dielectric suppression originates from the shorter and stronger bonds at the skin-deep surface, the associated local densification and quantum entrapment of energy. Coordination-imperfection induced local quantum entrapment perturbs the Hamiltonian that determines the band gap and hence, the process of electron polarization consequently.
URI: https://hdl.handle.net/10356/97507
http://hdl.handle.net/10220/10695
ISSN: 2040-3364
DOI: 10.1039/c2nr11154c
Rights: © 2012 The Royal Society of Chemistry.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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