Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97519
Title: Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate
Authors: Li, Y. S.
Lee, Pooi See
Pey, Kin Leong
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2004
Source: Li, Y. S., Lee, P. S., & Pey, K. L. (2004). Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate. Thin Solid Films, 462-463, 209-212.
Series/Report no.: Thin solid films
Abstract: Ti/Co and Co/Ti bilayered systems were used for the formation of Co germanosilicide on polysilicon buffered poly-Si1−xGex (x=0.2, 0.3) gate stacks. In both cases, substantial Ge was found to segregate to the grain boundaries at the surface of the polycrystalline silicide (i.e., CoSiGe) films, resulting in a substantial degradation in the sheet resistance and a poor quality of the silicide films. It is shown that Ge is probably being expelled from the poly-SiGe grain and segregates to the grain boundaries during the annealing process, leading to the undesirable sheet resistance and poor film morphology observed from the Co germanosilicide films.
URI: https://hdl.handle.net/10356/97519
http://hdl.handle.net/10220/10503
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2004.05.025
Rights: © 2004 Elsevier B.V.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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