Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97522
Title: Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis
Authors: Fernández-Rojas, Carlos J.
Morral, Anna Fontcuberta i.
Mata, Maria de la
Magen, Cesar
Gazquez, Jaume
Utama, Muhammad Iqbal Bakti
Heiss, Martin
Lopatin, Sergei
Furtmayr, Florian
Peng, Bo
Morante, Joan Ramon
Rurali, Riccardo
Eickhoff, Martin
Xiong, Qihua
Arbiol, Jordi
Issue Date: 2012
Source: Mata, M. d. l., Magen, C., Gazquez, J., Utama, M. I. B., Heiss, M., Lopatin, S., et al. (2012). Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis. Nano Letters, 12(5), 2579-2586.
Series/Report no.: Nano letters
Abstract: Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds in two extreme cases: (i) when the dumbbell is formed with atoms of similar mass (GaAs) and (ii) in the case where one of the atoms is extremely light (N or O: ZnO and GaN/AlN). The theoretical fundaments of these procedures allow us to overcome the main challenge in the identification of dumbbell polarity. It resides in the separation and identification of the constituent atoms in the dumbbells. The proposed experimental via opens new routes for the fine characterization of nanostructures, e.g., in electronic and optoelectronic fields, where the polarity is crucial for the understanding of their physical properties (optical and electronic) as well as their growth mechanisms.
URI: https://hdl.handle.net/10356/97522
http://hdl.handle.net/10220/10703
ISSN: 1530-6984
DOI: 10.1021/nl300840q
Rights: © 2012 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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