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Title: Band gap effects of hexagonal boron nitride using oxygen plasma
Authors: Singh, Ram Sevak
Tay, Roland Yingjie
Chow, Wai Leong
Tsang, Siu Hon
Mallick, Govind
Teo, Edwin Hang Tong
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2014
Source: Singh, R. S., Tay, R. Y., Chow, W. L., Tsang, S. H., Mallick, G., & Teo, E. H. T. (2014). Band gap effects of hexagonal boron nitride using oxygen plasma. Applied Physics Letters, 104(16), 163101-.
Series/Report no.: Applied physics letters
Abstract: Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.
DOI: 10.1063/1.4872318
Rights: © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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